Abstract In this study, thin films of AgInS, with chalcopyrite-type tetragonal structure were grown by means of a procedure based on the sequential evaporation of metallic precursors in presence of elemental sulfur in a two-stage process. The effect of the growth temperature and the pro- portion of the evaporated Ag mass in relation to the evaporated In mass (m /m) on the phase and homogeneity in the chemical composition were researched through X-ray diffraction measurements and Auger electrons spectroscopy. These measurements evidenced that the condi- tions for preparing thin films containing only the Agins, phase, grown with tetragonal chalcopyrite-type structure and good homogeneity of the chemical composition in the entire volume, are a temperature of 500 °C and a 0.89 mg/min proportion. The transient photocurrent measurements indicated that the electricity transmission is affected by recombination processes via band-to-band transitions and trap-assisted transitions.